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BFP640H6327XTSA1
Bipolar - RF Transistor, NPN, 4.7 V, 42 GHz, 200 mW, 50 mA, SOT-343
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBFP640H6327XTSA1
Newark Part No.85X4134
Also Known AsBFP 640 H6327, SP000745306
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 15 week(s)
| Quantity | Price |
|---|---|
| 1+ | $0.570 |
| 10+ | $0.395 |
| 25+ | $0.351 |
| 50+ | $0.327 |
| 100+ | $0.303 |
| 250+ | $0.281 |
| 500+ | $0.267 |
| 1000+ | $0.256 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$2.85
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Product Information
ManufacturerINFINEON
Manufacturer Part NoBFP640H6327XTSA1
Newark Part No.85X4134
Also Known AsBFP 640 H6327, SP000745306
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo4.7V
Collector Emitter Voltage Max4.7V
Transition Frequency42GHz
Power Dissipation Pd200mW
Power Dissipation200mW
Continuous Collector Current50mA
DC Collector Current50mA
DC Current Gain hFE110hFE
Transistor Case StyleSOT-343
RF Transistor CaseSOT-343
No. of Pins4Pins
DC Current Gain hFE Min110hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BFP 640 H6327 is a NPN low-noise Bipolar RF Transistor based on Infineon's reliable high volume silicon germanium carbon hetero-junction bipolar technology. With its high linearity at currents as low as 10mA this device supports energy efficient designs. The typical transition frequency is approximately 40GHz, hence the device offers high power gain at frequencies up to 8GHz in amplifier applications. The device is housed in an easy to use plastic package with visible leads.
- Linear low-noise wide band transistor
- High linearity
- High transition frequency
- Low power consumption
- Easy to use
- Halogen-free
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
4.7V
Power Dissipation Pd
200mW
Continuous Collector Current
50mA
DC Current Gain hFE
110hFE
RF Transistor Case
SOT-343
DC Current Gain hFE Min
110hFE
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Collector Emitter Voltage V(br)ceo
4.7V
Transition Frequency
42GHz
Power Dissipation
200mW
DC Collector Current
50mA
Transistor Case Style
SOT-343
No. of Pins
4Pins
Transistor Mounting
Surface Mount
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate