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BFR193E6327HTSA1
Bipolar - RF Transistor, NPN, 12 V, 8 GHz, 580 mW, 80 mA, SOT-23
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Product Information
ManufacturerINFINEON
Manufacturer Part NoBFR193E6327HTSA1
Newark Part No.79Y4025
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max12V
Collector Emitter Voltage V(br)ceo12V
Transition Frequency8GHz
Power Dissipation580mW
Power Dissipation Pd580mW
DC Collector Current80mA
Continuous Collector Current80mA
Transistor Case StyleSOT-23
RF Transistor CaseSOT-23
No. of Pins3Pins
DC Current Gain hFE Min70hFE
DC Current Gain hFE70hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
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Product Overview
The BFR 193 E6327 is a NPN low-noise silicon Bipolar RF Transistor for low noise, high-gain amplifiers up to 2GHz. The device is suitable for various applications like cellular and cordless phones, DECT, Tuners, FM and RF modems.
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
12V
Power Dissipation
580mW
DC Collector Current
80mA
Transistor Case Style
SOT-23
No. of Pins
3Pins
DC Current Gain hFE
70hFE
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
12V
Transition Frequency
8GHz
Power Dissipation Pd
580mW
Continuous Collector Current
80mA
RF Transistor Case
SOT-23
DC Current Gain hFE Min
70hFE
Transistor Mounting
Surface Mount
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate