CY15B104QN-50SXI

CY15B104QN-50SXI is a 4Mb EXCELON™ LP ferroelectric RAM (F-RAM). It is a low-power, 4Mb non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. It is capable of supporting 10^15 read/write cycles, or 1000 million times more write cycles than EEPROM. It is ideal for non-volatile memory applications, requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash or EEPROM can cause data loss.

• 4Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8
• Advanced high-reliability ferroelectric process
• Fast serial peripheral interface (SPI), up to 50MHz frequency
• Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
• Sophisticated write protection scheme, software block protection for 1/4, 1/2, or entire array
• Hardware protection using the write protect (active-low WP) pin
• Software protection using write disable (WRDI) instruction
• Device ID contains manufacturer ID and product ID, unique ID, serial number
• 8-pin SOIC (EIAJ) package
• Industrial operating temperature range from -40⁰C to +85⁰C