CY15B256Q-SXE

CY15B256Q-SXE is a 256-Kbit nonvolatile memory employing an advanced ferroelectric process. An F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. Unlike serial flash and EEPROM, the CY15B256Q performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. These capabilities make the CY15B256Q ideal for nonvolatile memory applications requiring frequent or rapid writes.

• 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32K × 8
• 121-year data retention minimum (TA = 85°C)
• NoDelay™ writes, advanced high-reliability ferroelectric process
• Very fast serial peripheral interface (SPI), direct hardware replacement for serial flash and EEPROM
• Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
• Sophisticated write-protection scheme, hardware protection using the active low WP pin
• Software protection using Write Disable instruction
• Low-voltage operation range from 2.7V to 3.6V
• 8-pin SOIC package, operating range from -40°C to +125°C (Automotive-E)