CY7C199D-10VXIT

CY7C199D-10VXIT is a high-performance CMOS static RAM organized as 32,768 words by 8-bits. Easy memory expansion is provided by an active LOW chip enable (active-low CE), an active LOW output enable (active-low OE) and tri-state drivers. This device has an automatic power-down feature, reducing the power consumption when deselected. The input and output pins (I/O0 through I/O7) are placed in a high impedance state when the device is deselected (active-low CE HIGH), the outputs are disabled (active-low OE HIGH), or during a write operation (active-low CE LOW and active-low WE LOW). Write to the device by taking chip enable (active-low CE) and write enable (active-low WE) inputs LOW. Read from the device by taking chip enable (active-low CE) and output enable (active-low OE) LOW while forcing write enable (active-low WE) HIGH. The CY7C199D device is suitable for interfacing with processors that have TTL I/P levels.

• Pin and function compatible with CY7C199C
• High speed tAA=10ns
• Low active current ICC is 80mA at 10ns
• Low CMOS standby power ISB2=3mA
• 2.0V data retention, 5V ±0.5V voltage rating
• Automatic power-down when deselected
• Complementary metal oxide semiconductor (CMOS) for optimum speed/power
• Transistor-transistor logic (TTL) compatible inputs and outputs
• 28-pin Molded SOJ package
• Industrial ambient temperature range from -40°C to +85°C