FM25V05-GTR

FM25V05-GTR is a FM25V05 512Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. It performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. It provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement. This uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology.

• 512-Kbit ferroelectric random access memory (F-RAM) logically organized as 64K × 8
• NoDelay™ writes, advanced high-reliability ferroelectric process
• Very fast serial peripheral interface (SPI), up to 40MHz frequency
• Direct hardware replacement for serial flash and EEPROM, supports SPI mode 0 (0, 0), mode 3 (1, 1)
• Sophisticated write protection scheme, hardware protection using the write protect active-low WP pin
• Software protection using write disable instruction
• Low power consumption, 300µA active current at 1MHz, 90µA (typ) standby current
• Low-voltage operation is VDD = 2.0V to 3.6V
• Industrial temperature range from –40°C to +85°C
• 8-pin SOIC package