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IGT65R140D2ATMA1
Gallium Nitride (GaN) Transistor, 650 V, 13 A, 0.17 ohm, 1.8 nC, HSOF, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIGT65R140D2ATMA1
Newark Part No.27AM0098
Product RangeCoolGaN G5 Series
Your Part Number
Technical Datasheet
Packaging Options
1,953 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $5.430 |
| 10+ | $3.550 |
| 25+ | $3.200 |
| 50+ | $2.840 |
| 100+ | $2.490 |
| 250+ | $2.350 |
| 500+ | $2.210 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
$5.43
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIGT65R140D2ATMA1
Newark Part No.27AM0098
Product RangeCoolGaN G5 Series
Technical Datasheet
Drain Source Voltage Vds650V
Continuous Drain Current Id13A
Drain Source On State Resistance0.17ohm
Typical Gate Charge1.8nC
Transistor Case StyleHSOF
Transistor MountingSurface Mount
No. of Pins8Pins
Product RangeCoolGaN G5 Series
Qualification-
SVHCTo Be Advised
Technical Specifications
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.17ohm
Transistor Case Style
HSOF
No. of Pins
8Pins
Qualification
-
Continuous Drain Current Id
13A
Typical Gate Charge
1.8nC
Transistor Mounting
Surface Mount
Product Range
CoolGaN G5 Series
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate