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IMBG65R083M1HXTMA1
Silicon Carbide MOSFET, Single, N Channel, 28 A, 650 V, 0.083 ohm, TO-263
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIMBG65R083M1HXTMA1
Newark Part No.26AK5710
Product RangeCoolSiC M1 Trench Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 29 week(s)
| Quantity | Price |
|---|---|
| 1+ | $9.860 |
| 10+ | $6.660 |
| 25+ | $6.220 |
| 50+ | $5.770 |
| 100+ | $5.340 |
| 250+ | $5.150 |
| 500+ | $4.970 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$9.86
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIMBG65R083M1HXTMA1
Newark Part No.26AK5710
Product RangeCoolSiC M1 Trench Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id28A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.083ohm
On Resistance Rds(on)0.083ohm
Transistor Case StyleTO-263
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.5V
Power Dissipation Pd126W
Power Dissipation126W
Operating Temperature Max175°C
Product RangeCoolSiC M1 Trench Series
MSL-
Technical Specifications
MOSFET Module Configuration
Single
Transistor Polarity
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.083ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4.5V
Power Dissipation
126W
Product Range
CoolSiC M1 Trench Series
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Continuous Drain Current Id
28A
Drain Source On State Resistance
0.083ohm
Transistor Case Style
TO-263
Rds(on) Test Voltage
18V
Power Dissipation Pd
126W
Operating Temperature Max
175°C
MSL
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability