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IMBG65R107M1HXTMA1
Silicon Carbide MOSFET, Single, N Channel, 24 A, 650 V, 0.107 ohm, TO-263
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIMBG65R107M1HXTMA1
Newark Part No.26AK5711
Product RangeCoolSiC M1 Trench Series
Technical Datasheet
26 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $8.430 |
| 10+ | $5.680 |
| 25+ | $5.270 |
| 50+ | $4.870 |
| 100+ | $4.470 |
| 250+ | $4.190 |
| 500+ | $3.910 |
| 1000+ | $3.630 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
$8.43
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIMBG65R107M1HXTMA1
Newark Part No.26AK5711
Product RangeCoolSiC M1 Trench Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id24A
Drain Source Voltage Vds650V
On Resistance Rds(on)0.107ohm
Drain Source On State Resistance0.107ohm
Transistor Case StyleTO-263
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.5V
Power Dissipation Pd110W
Power Dissipation110W
Operating Temperature Max175°C
Product RangeCoolSiC M1 Trench Series
MSL-
Technical Specifications
MOSFET Module Configuration
Single
Transistor Polarity
N Channel
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.107ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4.5V
Power Dissipation
110W
Product Range
CoolSiC M1 Trench Series
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Continuous Drain Current Id
24A
On Resistance Rds(on)
0.107ohm
Transistor Case Style
TO-263
Rds(on) Test Voltage
18V
Power Dissipation Pd
110W
Operating Temperature Max
175°C
MSL
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability