Print Page
IMDQ65R007M2HXUMA1
Silicon Carbide MOSFET, Single, N Channel, 196 A, 650 V, 0.061 ohm, HDSOP
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIMDQ65R007M2HXUMA1
Newark Part No.25AM8243
Product RangeCoolSiC G2 Series
Technical Datasheet
142 In Stock
Need more?
30 Delivery in 1-3 Business Days(US stock)
112 Delivery in 2-4 Business Days(UK stock)
Order before 9pm
| Quantity | Price |
|---|---|
| 1+ | $35.230 |
| 10+ | $28.420 |
| 25+ | $26.720 |
| 50+ | $25.790 |
| 100+ | $24.860 |
| 250+ | $23.970 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$35.23
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIMDQ65R007M2HXUMA1
Newark Part No.25AM8243
Product RangeCoolSiC G2 Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id196A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.061ohm
Transistor Case StyleHDSOP
No. of Pins22Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max5.6V
Power Dissipation937W
Operating Temperature Max175°C
Product RangeCoolSiC G2 Series
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
196A
Drain Source On State Resistance
0.061ohm
No. of Pins
22Pins
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
175°C
SVHC
To Be Advised
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
HDSOP
Rds(on) Test Voltage
20V
Power Dissipation
937W
Product Range
CoolSiC G2 Series
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate