Print Page
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPB025N08N3GATMA1
Newark Part No.60R2648
Also Known AsIPB025N08N3 G, SP000311980
Technical Datasheet
2,276 In Stock
Need more?
Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST standard shipping
Quantity | Price |
---|---|
1+ | $6.660 |
10+ | $4.790 |
25+ | $4.410 |
50+ | $4.040 |
100+ | $3.660 |
250+ | $3.600 |
500+ | $3.530 |
Price for:Each
Minimum: 1
Multiple: 1
$6.66
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB025N08N3GATMA1
Newark Part No.60R2648
Also Known AsIPB025N08N3 G, SP000311980
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id120A
On Resistance Rds(on)0.002ohm
Drain Source On State Resistance0.0025ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd300W
Gate Source Threshold Voltage Max2.8V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Product Overview
The IPB025N08N3 G is a N-channel Power MOSFET with performance leading benchmark OptiMOS™ technology. It is the market leader in highly efficient solutions for power generation, power supply and power consumption applications.
- Optimized technology for DC-to-DC converters
- Excellent gate charge x RDS (ON) product (FOM)
- Superior thermal resistance
- Dual sided cooling
- Low parasitic inductance
- Normal level
- 100% avalanche tested
- Ideal for high frequency switching and synchronous rectification
- Qualified according to JEDEC for target applications
- Halogen-free, Green device
Applications
Power Management, Consumer Electronics, Communications & Networking, Motor Drive & Control, LED Lighting, Automotive
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
120A
Drain Source On State Resistance
0.0025ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
300W
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
80V
On Resistance Rds(on)
0.002ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.8V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Alternatives for IPB025N08N3GATMA1
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability