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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD050N03LGATMA1
Newark Part No.13AC9038
Product RangeOptiMOS 3
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id50A
On Resistance Rds(on)0.0042ohm
Drain Source On State Resistance0.005ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.2V
Power Dissipation Pd68W
Power Dissipation68W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS 3
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
- OptiMOS™ 3 power-transistor
- Fast switching MOSFET for SMPS
- Optimized technology for DC/DC converters
- Qualified according to JEDEC for target application
- N-channel, logic level
- Excellent gate charge xRDS(on) product (FOM)
- Very low on-resistance RDS(on)
- Avalanche rated
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0042ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation Pd
68W
No. of Pins
3Pins
Product Range
OptiMOS 3
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
50A
Drain Source On State Resistance
0.005ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.2V
Power Dissipation
68W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate