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IRF7329TRPBF
MOSFET, DUAL P CH, -12V, -9.2A, SOIC-8
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ManufacturerINFINEON
Manufacturer Part NoIRF7329TRPBF
Newark Part No.13AC9190
Product RangeHEXFET Series
Technical Datasheet
3,989 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $1.920 |
| 10+ | $1.250 |
| 25+ | $1.140 |
| 50+ | $1.020 |
| 100+ | $0.903 |
| 250+ | $0.854 |
| 500+ | $0.705 |
| 1000+ | $0.655 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.92
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF7329TRPBF
Newark Part No.13AC9190
Product RangeHEXFET Series
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds N Channel12V
Drain Source Voltage Vds12V
Drain Source Voltage Vds P Channel12V
Continuous Drain Current Id9.2A
Continuous Drain Current Id N Channel9.2A
Continuous Drain Current Id P Channel9.2A
Drain Source On State Resistance N Channel0.017ohm
Drain Source On State Resistance P Channel0.017ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product RangeHEXFET Series
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
12V
Continuous Drain Current Id
9.2A
Continuous Drain Current Id P Channel
9.2A
Drain Source On State Resistance P Channel
0.017ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
HEXFET Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
12V
Drain Source Voltage Vds P Channel
12V
Continuous Drain Current Id N Channel
9.2A
Drain Source On State Resistance N Channel
0.017ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability