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IRF8313TRPBF
Dual MOSFET, Dual N Channel, 30 V, 30 V, 9.7 A, 0.0155 ohm
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ManufacturerINFINEON
Manufacturer Part NoIRF8313TRPBF
Newark Part No.42Y0424
Product RangeHEXFET Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $1.570 |
| 10+ | $1.280 |
| 25+ | $1.170 |
| 50+ | $1.050 |
| 100+ | $0.939 |
| 250+ | $0.868 |
| 500+ | $0.795 |
| 1000+ | $0.733 |
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Multiple: 1
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF8313TRPBF
Newark Part No.42Y0424
Product RangeHEXFET Series
Technical Datasheet
Channel TypeDual N Channel
Continuous Drain Current Id9.7A
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Drain Source Voltage Vds30V
Continuous Drain Current Id N Channel9.7A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.0155ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel-
Operating Temperature Max175°C
Product RangeHEXFET Series
Qualification-
MSLMSL 1 - Unlimited
SVHCTo Be Advised
Product Overview
The IRF8313TRPBF is a dual N-channel Power MOSFET incorporates the latest HEXFET power silicon technology into the industry standard package. It has been optimized for parameters that are critical in synchronous buck operation including RDS (ON) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-to-DC converters that power the latest generation of processors for notebook and Netcom applications.
- Low gate charge and low RDS (ON)
- Fully characterized avalanche voltage and current
- Halogen-free
Technical Specifications
Channel Type
Dual N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds
30V
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
HEXFET Series
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
9.7A
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
9.7A
Drain Source On State Resistance N Channel
0.0155ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
175°C
Qualification
-
SVHC
To Be Advised
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate