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ManufacturerINFINEON
Manufacturer Part NoIRFB4410PBF
Newark Part No.97K1977
Product RangeHEXFET Series
Technical Datasheet
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFB4410PBF
Newark Part No.97K1977
Product RangeHEXFET Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id96A
Drain Source On State Resistance0.01ohm
On Resistance Rds(on)0.008ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage20V
Power Dissipation Pd250W
Gate Source Threshold Voltage Max4V
Power Dissipation250W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET Series
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IRFB4410PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and di/dt capability
- Fast switching
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.01ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
20V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
HEXFET Series
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
96A
On Resistance Rds(on)
0.008ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
250W
Power Dissipation
250W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
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Associated Products
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate