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IRL7486MTRPBF
Power MOSFET, N Channel, 40 V, 209 A, 0.00125 ohm, DirectFET ME, Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIRL7486MTRPBF
Newark Part No.53Y4841
Product RangeStrongIRFET Series
Also Known AsSP001567046
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $1.890 |
| 10+ | $1.760 |
| 25+ | $1.740 |
| 50+ | $1.600 |
| 100+ | $1.460 |
| 250+ | $1.450 |
| 500+ | $1.390 |
| 1000+ | $1.370 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRL7486MTRPBF
Newark Part No.53Y4841
Product RangeStrongIRFET Series
Also Known AsSP001567046
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id209A
On Resistance Rds(on)0.001ohm
Drain Source On State Resistance0.00125ohm
Transistor Case StyleDirectFET ME
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd104W
Gate Source Threshold Voltage Max2.5V
Power Dissipation104W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeStrongIRFET Series
Qualification-
MSLMSL 2 - 1 year
SVHCNo SVHC (21-Jan-2025)
Product Overview
IRL7486MTRPBF is a N channel power MOSFET. Application includes brushed motor drive applications, BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, resonant mode power supplies, OR-ing and redundant power switches, DC/DC and AC/DC converters, DC/AC inverters.
- Optimized for logic level drive
- Improved gate, avalanche and dynamic dv/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dv/dt and di/dt capability
- Drain-to-source breakdown voltage is 40V (min, VGS = 0V, ID = 250µA, TJ = 25°C)
- Static drain-to-source on-resistance is 1.0mohm (typ, VGS = 10V, ID = 123A, TJ = 25°C)
- Continuous drain current, VGS at 10V (silicon limited) is 209A (max, TC = 25°C)
- Internal gate resistance is 0.97ohm (typ, TJ = 25°C)
- Forward transconductance is 427S (TJ = 25°C, VDS = 10V, ID = 123A, typ)
- DirectFET® ME package, operating junction and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.001ohm
Transistor Case Style
DirectFET ME
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
StrongIRFET Series
MSL
MSL 2 - 1 year
Transistor Polarity
N Channel
Continuous Drain Current Id
209A
Drain Source On State Resistance
0.00125ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
104W
Power Dissipation
104W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
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Product Compliance Certificate
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