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IRLHS6376TRPBF
Dual MOSFET, N Channel, 30 V, 30 V, 3.6 A, 3.6 A, 0.048 ohm
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ManufacturerINFINEON
Manufacturer Part NoIRLHS6376TRPBF
Newark Part No.91Y4786
Product RangeHEXFET Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $0.556 |
| 10+ | $0.334 |
| 25+ | $0.317 |
| 50+ | $0.299 |
| 100+ | $0.283 |
| 250+ | $0.281 |
| 500+ | $0.262 |
| 1000+ | $0.219 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$0.56
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRLHS6376TRPBF
Newark Part No.91Y4786
Product RangeHEXFET Series
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id3.6A
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel3.6A
Continuous Drain Current Id P Channel3.6A
Drain Source On State Resistance N Channel0.048ohm
Drain Source On State Resistance P Channel0.048ohm
Transistor Case StyleDFN2020
No. of Pins8Pins
Power Dissipation N Channel1.5W
Power Dissipation P Channel1.5W
Operating Temperature Max150°C
Product RangeHEXFET Series
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
3.6A
Drain Source On State Resistance P Channel
0.048ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.5W
Product Range
HEXFET Series
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
3.6A
Drain Source Voltage Vds
30V
Continuous Drain Current Id N Channel
3.6A
Drain Source On State Resistance N Channel
0.048ohm
Transistor Case Style
DFN2020
Power Dissipation N Channel
1.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate