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S29GL01GS11DHIV13
Flash Memory, Parallel NOR, 1 Gbit, 128M x 8bit, Parallel, FBGA, 64 Pins
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ManufacturerINFINEON
Manufacturer Part NoS29GL01GS11DHIV13
Newark Part No.87AK1597
Product Range3V Parallel NOR Flash Memories
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $17.250 |
| 10+ | $16.350 |
| 25+ | $15.530 |
| 50+ | $14.780 |
| 100+ | $14.070 |
| 250+ | $13.540 |
| 500+ | $13.130 |
| 1000+ | $12.830 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$17.25
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Product Information
ManufacturerINFINEON
Manufacturer Part NoS29GL01GS11DHIV13
Newark Part No.87AK1597
Product Range3V Parallel NOR Flash Memories
Technical Datasheet
Flash Memory TypeParallel NOR
Memory Density1Gbit
Memory Configuration128M x 8bit
InterfacesParallel
IC Case / PackageFBGA
No. of Pins64Pins
Clock Frequency Max-
Access Time110ns
Supply Voltage Min2.7V
Supply Voltage Max3.6V
Supply Voltage Nom3V
IC MountingSurface Mount
Operating Temperature Min-40°C
Operating Temperature Max85°C
Product Range3V Parallel NOR Flash Memories
SVHCNo SVHC (21-Jan-2025)
Product Overview
S29GL01GS11DHIV13 is a MIRRORBIT™ Eclipse flash memory fabricated on 65-nm process technology. This device offers a fast page access time of as fast as 15ns with a corresponding random access time of as fast as 90ns. It features a write buffer that allows a maximum of 256 words/512bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. It makes this device ideal for today’s embedded applications requiring higher density, better performance, and lower power consumption.
- 110ns random access time speed option, industrial temperature range from -40°C to +85°C
- Fortified ball-grid array (LAE064) package type
- VIO is 1.65V to VCC, VCC is 2.7V to 3.6V, highest address sector protected
- ×16 data bus, asynchronous 32byte page read
- Sector erase, uniform 128kbyte sectors
- Suspend and resume commands for program and erase operations
- Automatic error checking and correction internal hardware ECC with single bit error correction
- Separate 1024byte one time program (OTP) array with two lockable regions
- Volatile and non-volatile protection methods for each sector
- 100000 program / erase cycles, 20 years data retention
Technical Specifications
Flash Memory Type
Parallel NOR
Memory Configuration
128M x 8bit
IC Case / Package
FBGA
Clock Frequency Max
-
Supply Voltage Min
2.7V
Supply Voltage Nom
3V
Operating Temperature Min
-40°C
Product Range
3V Parallel NOR Flash Memories
Memory Density
1Gbit
Interfaces
Parallel
No. of Pins
64Pins
Access Time
110ns
Supply Voltage Max
3.6V
IC Mounting
Surface Mount
Operating Temperature Max
85°C
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:3A991B1A
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate