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S29GL01GT10FHI010
Flash Memory, Parallel NOR, 1 Gbit, 128M x 8bit, CFI, Parallel, FBGA, 64 Pins
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ManufacturerINFINEON
Manufacturer Part NoS29GL01GT10FHI010
Newark Part No.22AC8617
Product Range3V Parallel NOR Flash Memories
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $18.500 |
| 10+ | $16.910 |
| 25+ | $16.200 |
| 50+ | $15.350 |
| 100+ | $14.790 |
| 250+ | $14.200 |
| 500+ | $13.950 |
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Multiple: 1
$18.50
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Product Information
ManufacturerINFINEON
Manufacturer Part NoS29GL01GT10FHI010
Newark Part No.22AC8617
Product Range3V Parallel NOR Flash Memories
Technical Datasheet
Flash Memory TypeParallel NOR
Memory Size1Gbit
Memory Density1Gbit
Flash Memory Configuration128M x 8bit
Memory Configuration128M x 8bit
InterfacesCFI, Parallel
IC Interface TypeCFI, Parallel
IC Case / PackageFBGA
Memory Case StyleFBGA
No. of Pins64Pins
Clock Frequency-
Clock Frequency Max-
Access Time100ns
Supply Voltage Min2.7V
Supply Voltage Max3.6V
Supply Voltage Nom3V
IC MountingSurface Mount
Operating Temperature Min-40°C
Operating Temperature Max85°C
Product Range3V Parallel NOR Flash Memories
MSLMSL 3 - 168 hours
SVHCNo SVHC (21-Jan-2025)
Product Overview
S29GL01GT10FHI010 is a 128M x 8bit, 1Gbit, MIRRORBIT™ Eclipse parallel NOR flash product fabricated on 45nm process technology. Device is ideal for embedded applications that require higher density, better performance and lower power consumption.
- VIO=VCC=2.7- 3.6V(high address sector protected), 100ns random access time
- CFI parallel interface
- Asynchronous 32-byte page read
- 512-byte programming buffer, programming in page multiples, up to a maximum of 512 bytes
- Single word and multiple program on same word options
- Automatic error checking and correction (ECC) - internal hardware ECC w/ single bit error correction
- Suspend and resume commands for program and erase operations
- Status register, data polling, and ready/busy pin methods to determine device status
- 100,000 program/erase cycles, 20yrs data retention, separate 2048byte OTP array w/ 4 lockable region
- Fortified ball-grid array package (LAA064) 13 x 11mm, industrial temperature range from -40 to 85°C
Technical Specifications
Flash Memory Type
Parallel NOR
Memory Density
1Gbit
Memory Configuration
128M x 8bit
IC Interface Type
CFI, Parallel
Memory Case Style
FBGA
Clock Frequency
-
Access Time
100ns
Supply Voltage Max
3.6V
IC Mounting
Surface Mount
Operating Temperature Max
85°C
MSL
MSL 3 - 168 hours
Memory Size
1Gbit
Flash Memory Configuration
128M x 8bit
Interfaces
CFI, Parallel
IC Case / Package
FBGA
No. of Pins
64Pins
Clock Frequency Max
-
Supply Voltage Min
2.7V
Supply Voltage Nom
3V
Operating Temperature Min
-40°C
Product Range
3V Parallel NOR Flash Memories
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:3A991B1A
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate