Product Information
Product Overview
The IS61LV6416-10TL is a 64K x 16-bit high-speed CMOS Static Random Access Memory (SRAM) with 3.3V supply. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using chip enable and output enable inputs CE and OE. The active LOW write enable (WE) controls both writing and reading of the memory. A data byte allows upper byte (UB) and lower byte (LB) access.
- High-speed access time - 10ns
- CMOS low power operation
- TTL compatible interface levels
- Single 3.3V power supply
- Fully static operation - no clock or refresh required
- 3-State outputs
- Data control for upper and lower bytes
Applications
Computers & Computer Peripherals, Industrial, Communications & Networking, Consumer Electronics
Technical Specifications
Asynchronous SRAM
1Mbit
3.135V to 3.6V
TSOP-II
44Pins
10ns
3.3V
Surface Mount
70°C
MSL 3 - 168 hours
1Mbit
64K x 16bit
64K x 16bit
TSOP-II
3.135V
3.63V
-
0°C
-
No SVHC (23-Jan-2024)
Technical Docs (1)
Legislation and Environmental
RoHS
RoHS
Product Compliance Certificate