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DE150-501N04A
RF FET Transistor, 500 V, 4.5 A, 200 W, 100 MHz, DE-150
Image is for illustrative purposes only. Please refer to product description.
No Longer Available
Product Information
ManufacturerIXYS RF
Manufacturer Part NoDE150-501N04A
Newark Part No.42M1752
Technical Datasheet
Drain Source Voltage Vds500V
Continuous Drain Current Id4.5A
Power Dissipation200W
Operating Frequency Min-
Power Dissipation Pd200W
Operating Frequency Max100MHz
Transistor Case StyleDE-150
No. of Pins6Pins
RF Transistor CaseDE-150
Operating Temperature Max175°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
MSL-
SVHCNo SVHC (12-Jan-2017)
Product Overview
The DE150-501N04A is a N-channel enhancement mode RF Power MOSFET with isolated substrate for excellent thermal transfer and increased temperature and power cycling. Low gate charge and capacitances easier to drive and no beryllium oxide or other hazardous materials.
- Low Qg and Rg
- High dv/dt rating
- Nanosecond switching
Applications
RF Communications
Technical Specifications
Drain Source Voltage Vds
500V
Power Dissipation
200W
Power Dissipation Pd
200W
Transistor Case Style
DE-150
RF Transistor Case
DE-150
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (12-Jan-2017)
Continuous Drain Current Id
4.5A
Operating Frequency Min
-
Operating Frequency Max
100MHz
No. of Pins
6Pins
Operating Temperature Max
175°C
Transistor Mounting
Surface Mount
MSL
-
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (12-Jan-2017)
Download Product Compliance Certificate
Product Compliance Certificate