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DE275X2-102N06A
RF FET Transistor, 1 kV, 16 A, 1.18 kW, 100 MHz, DE-275X2
Image is for illustrative purposes only. Please refer to product description.
No Longer Available
Product Information
ManufacturerIXYS RF
Manufacturer Part NoDE275X2-102N06A
Newark Part No.42M1755
Technical Datasheet
Drain Source Voltage Vds1kV
Continuous Drain Current Id16A
Power Dissipation1.18kW
Power Dissipation Pd1.18kW
Operating Frequency Min-
Operating Frequency Max100MHz
Transistor Case StyleDE-275X2
No. of Pins8Pins
RF Transistor CaseDE-275X2
Operating Temperature Max175°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
MSL-
SVHCNo SVHC (12-Jan-2017)
Product Overview
The DE275X2-102N06A is a matched pair RF power MOSFET device in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to <gt/>65MHz very low insertion inductance and isolated substrate with excellent thermal transfer. Low gate charge and capacitances easier to drive and no beryllium oxide or other hazardous materials.
- N-channel enhancement mode
- Common source push-pull pair
- Low Qg and Rg
- High dv/dt rating
- Nanosecond switching
- Low insertion inductance
Applications
RF Communications
Technical Specifications
Drain Source Voltage Vds
1kV
Power Dissipation
1.18kW
Operating Frequency Min
-
Transistor Case Style
DE-275X2
RF Transistor Case
DE-275X2
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (12-Jan-2017)
Continuous Drain Current Id
16A
Power Dissipation Pd
1.18kW
Operating Frequency Max
100MHz
No. of Pins
8Pins
Operating Temperature Max
175°C
Transistor Mounting
Surface Mount
MSL
-
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (12-Jan-2017)
Download Product Compliance Certificate
Product Compliance Certificate