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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN100N50P
Newark Part No.58M7617
Technical Datasheet
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Quantity | Price |
---|---|
1+ | $64.330 |
5+ | $56.380 |
10+ | $50.310 |
30+ | $49.470 |
50+ | $48.540 |
100+ | $47.970 |
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Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN100N50P
Newark Part No.58M7617
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id90A
Drain Source On State Resistance0.049ohm
On Resistance Rds(on)0.049ohm
Transistor Case StyleSOT-227B
Transistor MountingModule
Rds(on) Test Voltage10V
Power Dissipation Pd1.04kW
Gate Source Threshold Voltage Max5V
Power Dissipation1.04kW
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Jan-2023)
Product Overview
The IXFN100N50P is a N-channel enhancement mode Power MOSFET features miniBLOC with aluminium nitride isolation, fast recovery diode and unclamped inductive switching (UIS) rated.
- Fast recovery diode
- Low inductance
- UL94V-0 Flammability rating
- Easy to mount
- Space savings
- High power density
Applications
Power Management, Lighting
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.049ohm
Transistor Case Style
SOT-227B
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5V
No. of Pins
4Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
90A
On Resistance Rds(on)
0.049ohm
Transistor Mounting
Module
Power Dissipation Pd
1.04kW
Power Dissipation
1.04kW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Jan-2023)
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability