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Available to Order
Manufacturer Standard Lead Time: 6 week(s)
Product Information
ManufacturerMCM
Manufacturer Part No287-12000
Newark Part No.33AC0192
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max100V
Collector Emitter Voltage V(br)ceo100V
Continuous Collector Current8A
Power Dissipation-
Power Dissipation Pd-
Transistor Case StyleTO-220
DC Collector Current8A
DC Current Gain hFE-
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min-
Operating Temperature Max-
Product Range-
Qualification-
MSL-
SVHCTo Be Advised
Product Overview
The TIP102 is a 100V NPN epitaxial silicon Darlington Transistor for industrial use. It features monolithic construction with built in base-emitter shunt resistors. This product is general usage and suitable for many different applications. The transistor is complementary to TIP105/106/107.
- High DC current gain (hFE=1000 at VCE= 4V, IC = 3A minimum)
- Low collector-emitter saturation voltage
- 100V Collector base voltage (VCBO)
- 5V Emitter base voltage (VEBO)
- 1A Base current (IB)
Applications
Industrial
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
100V
Power Dissipation
-
Transistor Case Style
TO-220
DC Current Gain hFE
-
No. of Pins
3Pins
DC Current Gain hFE Min
-
Product Range
-
MSL
-
Collector Emitter Voltage Max
100V
Continuous Collector Current
8A
Power Dissipation Pd
-
DC Collector Current
8A
Transistor Mounting
Through Hole
Transition Frequency
-
Operating Temperature Max
-
Qualification
-
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:No
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate