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MT29F4G08ABAFAWP-AAT:F
Flash Memory, SLC NAND, 4 Gbit, 512M x 8bit, Parallel, TSOP, 48 Pins
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ManufacturerMICRON
Manufacturer Part NoMT29F4G08ABAFAWP-AAT:F
Newark Part No.80AH7783
Product Range3.3V Parallel NAND Flash Memories
Technical Datasheet
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Product Information
ManufacturerMICRON
Manufacturer Part NoMT29F4G08ABAFAWP-AAT:F
Newark Part No.80AH7783
Product Range3.3V Parallel NAND Flash Memories
Technical Datasheet
Flash Memory TypeSLC NAND
Memory Size4Gbit
Memory Density4Gbit
Memory Configuration512M x 8bit
Flash Memory Configuration512M x 8bit
IC Interface TypeParallel
InterfacesParallel
IC Case / PackageTSOP
Memory Case StyleTSOP
No. of Pins48Pins
Clock Frequency50MHz
Clock Frequency Max50MHz
Access Time-
Supply Voltage Min-
Supply Voltage Max-
Supply Voltage Nom3.3V
IC MountingSurface Mount
Operating Temperature Min-40°C
Operating Temperature Max105°C
Product Range3.3V Parallel NAND Flash Memories
SVHCNo SVHC (17-Jan-2023)
Product Overview
MT29F4G08ABAFAWP-AAT:F is a NAND flash memory. This NAND flash device includes an asynchronous data interface for high-performance I/O operations. This device uses a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND flash dies. A NAND flash die is the minimum unit that can independently execute commands and report status.
- Open NAND flash interface (ONFI) 1.0-compliant
- Single-level cell (SLC) technology
- Command set: ONFI NAND flash protocol
- Operation status method for detecting: operation completion
- Pass/fail condition, write-protect status
- Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion
- RESET (FFh) required after power-on
- Internal data move operations supported within the plane from which data is read
- 4Gb density, 8-bit device width, 3.3V (2.7 to 3.6V) operating voltage range
- 48-pin TSOP type 1 package, automotive temperature range from -40°C to +105°C
Technical Specifications
Flash Memory Type
SLC NAND
Memory Density
4Gbit
Flash Memory Configuration
512M x 8bit
Interfaces
Parallel
Memory Case Style
TSOP
Clock Frequency
50MHz
Access Time
-
Supply Voltage Max
-
IC Mounting
Surface Mount
Operating Temperature Max
105°C
MSL
MSL 3 - 168 hours
Memory Size
4Gbit
Memory Configuration
512M x 8bit
IC Interface Type
Parallel
IC Case / Package
TSOP
No. of Pins
48Pins
Clock Frequency Max
50MHz
Supply Voltage Min
-
Supply Voltage Nom
3.3V
Operating Temperature Min
-40°C
Product Range
3.3V Parallel NAND Flash Memories
SVHC
No SVHC (17-Jan-2023)
Technical Docs (2)
Legislation and Environmental
US ECCN:3A991B1A
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate