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Product Information
Product Overview
MT46V64M8CY-5B:J is a double data rate (DDR) SDRAM. It uses a double data rate architecture to achieve high-speed operation. This double data rate architecture is essentially for 2n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the memory consists of a single 2n-bit-wide, one-clock cycle data transfer at the internal DRAM core and two corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins. It has an internal, pipelined double-data-rate (DDR) architecture with two data accesses per clock cycle.
- Operating voltage range is 2.5V to 2.7V
- 64Meg x 8 configuration
- Packaging style is 8mm x 12.5mm FBGA
- Timing (cycle time) is 5ns at CL = 3 (DDR400)
- Operating temperature range is 0°C to +70°C
- Clock rate is 200MHz, ᵗRAS lockout supported (ᵗRAP = ᵗRCD)
- Differential clock inputs (CK and CK#), four internal banks for concurrent operation
- Commands entered on each positive CK edge, concurrent auto precharge option is supported
- DQS edge-aligned with data for READs, centeraligned with data for WRITEs
- DLL to align DQ and DQS transitions with CK, auto refresh 64ms, 8192-cycle
Technical Specifications
DDR
512Mbit
64M x 8bit
200MHz
FBGA
2.6V
Surface Mount
70°C
MSL 3 - 168 hours
512Mbit
64M x 8bit
200MHz
FBGA
60Pins
5ns
0°C
-
No SVHC (17-Jan-2023)
Technical Docs (1)
Legislation and Environmental
RoHS
RoHS
Product Compliance Certificate