MT53E256M16D1FW-046 AUT:B

MT53E256M16D1FW-046 AUT:B is a 4Gb mobile low-power DDR4 SDRAM with low VDDQ. It is a high-speed CMOS, dynamic random-access memory. This memory is internally configured with x16 I/O, 8-banks. Each of the x16’s 536,870,912-bit banks are organized as 32,768 rows by 1024 columns by 16bits. It has programmable VSS (ODT) termination and partial-array self refresh (PASR). This memory has on-chip temperature sensor to control self refresh rate and directed per-bank refresh for concurrent bank operation and ease of command scheduling.

• Operating voltage range is 1.10V (VDD2)/0.60V or 1.10V (VDDQ)
• 256Meg x 16 configuration, LPDDR4, 1die addressing
• Packaging style is 200-ball TFBGA
• Cycle time is 468ps at RL = 36/40
• Operating temperature range is –40°C to +125°C, E design, automotive qualified
• Clock rate is 2133MHz, data rate per pin is 4266Mb/s
• Ultra-low-voltage core and I/O power supplies
• 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
• Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
• Programmable READ and WRITE latencies (RL/WL), selectable output drive strength (DS)