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MT53E4G32D8GS-046 AIT:C
DRAM, Mobile LPDDR4, 128 Gbit, 4G x 32bit, 2.133 GHz, FBGA
Image is for illustrative purposes only. Please refer to product description.
ManufacturerMICRON
Manufacturer Part NoMT53E4G32D8GS-046 AIT:C
Newark Part No.48AK5434
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 41 week(s)
| Quantity | Price |
|---|---|
| 100+ | $843.220 |
Price for:Each
Minimum: 1360
Multiple: 1360
$1,146,779.20
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerMICRON
Manufacturer Part NoMT53E4G32D8GS-046 AIT:C
Newark Part No.48AK5434
Technical Datasheet
DRAM TypeMobile LPDDR4
DRAM Density128Gbit
Memory Density128Gbit
DRAM Memory Configuration4G x 32bit
Memory Configuration4G x 32bit
Clock Frequency Max2.133GHz
Clock Frequency2.133GHz
Memory Case StyleFBGA
IC Case / PackageFBGA
No. of Pins-
Supply Voltage Nom1.1V
Access Time468ps
IC MountingSurface Mount
Operating Temperature Min-40°C
Operating Temperature Max95°C
Product Range-
SVHCNo SVHC (17-Jan-2023)
Product Overview
MT53E4G32D8GS-046 AIT:C is a 16Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed, CMOS dynamic random-access memory device. This device is internally configured with 1 channel ×16 I/O, having 8-banks.
- Frequency range from 2133 to 10MHz (data rate range per pin: 4266-20Mb/s)
- 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL), selectable output drive strength (DS)
- Programmable and on-the-fly burst lengths (BL =16, 32), up to 8.5GB/s per die x16 channel
- Directed per-bank refresh for concurrent bank operation and ease of command scheduling
- On-chip temperature sensor to control self refresh rate, partial-array self refresh (PASR)
- Clock-stop capability, programmable VSS (ODT) termination, single-ended CK and DQS support
- 16GB (128Gb) total density, 4266Mb/s data rate per pin, AEC-Q100 automotive qualified
- 200-ball LFBGA package, -40°C to +95°C operating temperature
Technical Specifications
DRAM Type
Mobile LPDDR4
Memory Density
128Gbit
Memory Configuration
4G x 32bit
Clock Frequency
2.133GHz
IC Case / Package
FBGA
Supply Voltage Nom
1.1V
IC Mounting
Surface Mount
Operating Temperature Max
95°C
SVHC
No SVHC (17-Jan-2023)
DRAM Density
128Gbit
DRAM Memory Configuration
4G x 32bit
Clock Frequency Max
2.133GHz
Memory Case Style
FBGA
No. of Pins
-
Access Time
468ps
Operating Temperature Min
-40°C
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate