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CM150DU-12H
IGBT Module, Dual [Half Bridge], 150 A, 3 V, 600 W, 150 °C, Module
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ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM150DU-12H
Newark Part No.73K1933
Product RangeU- Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 28 week(s)
Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM150DU-12H
Newark Part No.73K1933
Product RangeU- Series
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityN Channel
DC Collector Current150A
Continuous Collector Current150A
Collector Emitter Saturation Voltage Vce(on)600V
Collector Emitter Saturation Voltage3V
Power Dissipation600W
Power Dissipation Pd600W
Collector Emitter Voltage V(br)ceo600V
Junction Temperature, Tj Max150°C
Operating Temperature Max150°C
Transistor Case StyleModule
No. of Pins7Pins
IGBT TerminationTab
IGBT Technology-
Collector Emitter Voltage Max600V
Transistor MountingPanel
Product RangeU- Series
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
150A
Collector Emitter Saturation Voltage Vce(on)
600V
Power Dissipation
600W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Max
150°C
No. of Pins
7Pins
IGBT Technology
-
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
N Channel
Continuous Collector Current
150A
Collector Emitter Saturation Voltage
3V
Power Dissipation Pd
600W
Junction Temperature, Tj Max
150°C
Transistor Case Style
Module
IGBT Termination
Tab
Collector Emitter Voltage Max
600V
Product Range
U- Series
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:No
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate