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CM600DU-24NFH
IGBT Module, Dual [Half Bridge], 600 A, 6.5 V, 1.55 kW, 150 °C, Module
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ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM600DU-24NFH
Newark Part No.57J1799
Product RangeNFH Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 53 week(s)
| Quantity | Price |
|---|---|
| 10+ | $520.530 |
| 25+ | $490.580 |
Price for:Each
Minimum: 10
Multiple: 10
$5,205.30
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Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM600DU-24NFH
Newark Part No.57J1799
Product RangeNFH Series
Technical Datasheet
Transistor PolarityN Channel
IGBT ConfigurationDual [Half Bridge]
DC Collector Current600A
Continuous Collector Current600A
Collector Emitter Saturation Voltage6.5V
Collector Emitter Saturation Voltage Vce(on)1.2kV
Power Dissipation Pd1.55kW
Power Dissipation1.55kW
Collector Emitter Voltage V(br)ceo1.2kV
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Transistor Case StyleModule
No. of Pins7Pins
IGBT TerminationTab
Collector Emitter Voltage Max1.2kV
IGBT Technology-
Transistor MountingPanel
Product RangeNFH Series
SVHCTo Be Advised
Product Overview
The CM600DU-24NFH is a 1200V Dual IGBTMOD™ NFH-series Module designed for use in high frequency applications, 30kHz for hard switching applications and 60 to 70kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
- Low ESW(off)
- Discrete super-fast recovery free-wheel diode
- Isolated baseplate for easy heat sinking
- ±20V Gate-emitter voltage (C-E short)
- 1200A Peak collector current
- 600A Emitter current
Applications
Power Management, HVAC, Industrial
Technical Specifications
Transistor Polarity
N Channel
DC Collector Current
600A
Collector Emitter Saturation Voltage
6.5V
Power Dissipation Pd
1.55kW
Collector Emitter Voltage V(br)ceo
1.2kV
Junction Temperature, Tj Max
150°C
No. of Pins
7Pins
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
Dual [Half Bridge]
Continuous Collector Current
600A
Collector Emitter Saturation Voltage Vce(on)
1.2kV
Power Dissipation
1.55kW
Operating Temperature Max
150°C
Transistor Case Style
Module
IGBT Termination
Tab
IGBT Technology
-
Product Range
NFH Series
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate