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Product Information
ManufacturerMULTICOMP PRO
Manufacturer Part NoBDV66B
Newark Part No.14M4497
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max100V
Collector Emitter Voltage V(br)ceo100V
Continuous Collector Current16A
Power Dissipation Pd125W
Transition Frequency6MHz
Power Dissipation125W
DC Collector Current16A
RF Transistor CaseTO-247
No. of Pins3Pins
Transistor Case StyleTO-247
DC Current Gain hFE-
Transistor MountingThrough Hole
Operating Temperature Max150°C
DC Current Gain hFE Min-
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BDV66B is a -100V Silicon PNP Complementary Darlington Power Transistor having monolithic construction with built-in base-emitter shunt resistor.
- Collector-emitter sustaining voltage (Vceo (sus) = 100V minimum)
- Collector-emitter saturation voltage(Vceo (sat) = 2V maximum at Ic = 10A)
- Collector-base voltage(Vcbo = 100V)
- Emitter-base voltage(Vebo = 5V)
- Multicomp Pro products are rated 4.6 out of 5 stars
- 12 month limited warranty *view Terms & Conditions for details
- 96% of customers would recommend to a friend
Applications
Industrial
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
100V
Power Dissipation Pd
125W
Power Dissipation
125W
RF Transistor Case
TO-247
Transistor Case Style
TO-247
Transistor Mounting
Through Hole
DC Current Gain hFE Min
-
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Collector Emitter Voltage Max
100V
Continuous Collector Current
16A
Transition Frequency
6MHz
DC Collector Current
16A
No. of Pins
3Pins
DC Current Gain hFE
-
Operating Temperature Max
150°C
Product Range
-
MSL
-
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability