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BSP19,115
Bipolar (BJT) Single Transistor, NPN, 350 V, 70 MHz, 1.2 W, 100 mA, 40 RoHS Compliant: Yes
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 59 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1.590 |
Price for:Each
Minimum: 1
Multiple: 1
$1.59
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBSP19,115
Newark Part No.34R3021
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max350V
Collector Emitter Voltage V(br)ceo350V
Continuous Collector Current100mA
Power Dissipation1.2W
Power Dissipation Pd1.2W
DC Collector Current100mA
Transistor Case StyleSOT-223
DC Current Gain hFE40hFE
Transistor MountingSurface Mount
No. of Pins4Pins
Transition Frequency70MHz
DC Current Gain hFE Min40hFE
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
350V
Power Dissipation
1.2W
DC Collector Current
100mA
DC Current Gain hFE
40hFE
No. of Pins
4Pins
DC Current Gain hFE Min
40hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
350V
Continuous Collector Current
100mA
Power Dissipation Pd
1.2W
Transistor Case Style
SOT-223
Transistor Mounting
Surface Mount
Transition Frequency
70MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability