Print Page
Image is for illustrative purposes only. Please refer to product description.
2,840 In Stock
Need more?
Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST standard shipping
Quantity | Price |
---|---|
1+ | $0.612 |
10+ | $0.377 |
100+ | $0.199 |
500+ | $0.163 |
1000+ | $0.135 |
2500+ | $0.134 |
Price for:Each
Minimum: 5
Multiple: 5
$3.06
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoNX3008CBKV,115
Newark Part No.75T7840
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id400mA
Drain Source Voltage Vds P Channel30V
Drain Source Voltage Vds30V
Continuous Drain Current Id N Channel400mA
Continuous Drain Current Id P Channel400mA
Drain Source On State Resistance N Channel1ohm
Drain Source On State Resistance P Channel1ohm
Transistor Case StyleSOT-666
No. of Pins6Pins
Power Dissipation N Channel330mW
Power Dissipation P Channel330mW
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The NX3008CBKV is a N/P-channel complementary enhancement-mode MOSFET in a very small surface-mount plastic package using Trench MOSFET technology. It is suitable for level shifter, power supply converter, load switch and switching circuit applications.
- Very fast switching characteristics
- Low threshold voltage
Applications
Industrial, Power Management
Technical Specifications
Channel Type
Complementary N and P Channel
Continuous Drain Current Id
400mA
Drain Source Voltage Vds
30V
Continuous Drain Current Id P Channel
400mA
Drain Source On State Resistance P Channel
1ohm
No. of Pins
6Pins
Power Dissipation P Channel
330mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
400mA
Drain Source On State Resistance N Channel
1ohm
Transistor Case Style
SOT-666
Power Dissipation N Channel
330mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability