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Quantity | Price |
---|---|
1+ | $0.640 |
10+ | $0.402 |
100+ | $0.238 |
500+ | $0.192 |
1000+ | $0.166 |
2500+ | $0.141 |
12000+ | $0.114 |
27000+ | $0.098 |
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Multiple: 5
$3.20
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMGD290UCEAX
Newark Part No.12X8769
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id725mA
Drain Source Voltage Vds P Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id N Channel725mA
Continuous Drain Current Id P Channel725mA
Drain Source On State Resistance N Channel0.29ohm
Drain Source On State Resistance P Channel0.29ohm
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel445mW
Power Dissipation P Channel445mW
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The PMGD290UCEA is a complementary N/P-channel enhancement-mode FET in a very small surface-mount plastic package using Trench MOSFET technology. It is suitable for relay driver, high-speed line driver, low-side load-switch and switching circuit applications.
- Very fast switching characteristics
Technical Specifications
Channel Type
Complementary N and P Channel
Continuous Drain Current Id
725mA
Drain Source Voltage Vds
20V
Continuous Drain Current Id P Channel
725mA
Drain Source On State Resistance P Channel
0.29ohm
No. of Pins
6Pins
Power Dissipation P Channel
445mW
Product Range
-
MSL
-
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
725mA
Drain Source On State Resistance N Channel
0.29ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
445mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability