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AFT05MS006NT1
RF FET Transistor, 30 VDC, 128 W, 136 MHz, 941 MHz, PLD-1.5W
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Product Information
ManufacturerNXP
Manufacturer Part NoAFT05MS006NT1
Newark Part No.44X7174
Technical Datasheet
Drain Source Voltage Vds30VDC
Continuous Drain Current Id-
Power Dissipation128W
Power Dissipation Pd128W
Operating Frequency Min136MHz
Operating Frequency Max941MHz
Transistor Case StylePLD-1.5W
RF Transistor CasePLD-1.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
SVHCNo SVHC (27-Jun-2024)
Product Overview
- RF power LDMOS transistor
- Characterized for operation from 136 to 941MHz
- Unmatched input and output allowing wide frequency range utilization
- Integrated ESD protection
- Integrated stability enhancements
- Exceptional thermal performance
- High ruggedness N-channel enhancement mode lateral MOSFET
Technical Specifications
Drain Source Voltage Vds
30VDC
Power Dissipation
128W
Operating Frequency Min
136MHz
Transistor Case Style
PLD-1.5W
No. of Pins
3Pins
Product Range
-
Continuous Drain Current Id
-
Power Dissipation Pd
128W
Operating Frequency Max
941MHz
RF Transistor Case
PLD-1.5W
Operating Temperature Max
150°C
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate