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BF998,215
RF FET Transistor, 12 V, 30 mA, 200 mW, SOT-143B
Image is for illustrative purposes only. Please refer to product description.
Packaging Options
Available to Order
Manufacturer Standard Lead Time: 14 week(s)
Product Information
ManufacturerNXP
Manufacturer Part NoBF998,215
Newark Part No.75R4683
Technical Datasheet
Drain Source Voltage Vds12V
Continuous Drain Current Id30mA
Power Dissipation200mW
Power Dissipation Pd200mW
Operating Frequency Min-
Operating Frequency Max-
Transistor Case StyleSOT-143B
RF Transistor CaseSOT-143B
No. of Pins4Pins
Operating Temperature Max150°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
Product Overview
The BF998,215 is a dual gate N-channel MOSFET encapsulated in a plastic micro-miniature package with source and substrate interconnected. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. It is designed for use with VHF and UHF applications with 12V supply voltage, such as television tuners and professional communications equipment.
- Short channel transistor with high forward transfer admittance to input capacitance ratio
- Low noise gain controlled amplifier up to 1GHz
Applications
Industrial, Communications & Networking, Power Management
Technical Specifications
Drain Source Voltage Vds
12V
Power Dissipation
200mW
Operating Frequency Min
-
Transistor Case Style
SOT-143B
No. of Pins
4Pins
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Continuous Drain Current Id
30mA
Power Dissipation Pd
200mW
Operating Frequency Max
-
RF Transistor Case
SOT-143B
Operating Temperature Max
150°C
Transistor Mounting
Surface Mount
MSL
MSL 1 - Unlimited
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate