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BFG21W,115
Bipolar - RF Transistor, Wideband, NPN, 4.5 V, 18 GHz, 600 mW, 500 mA, SOT-343R
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No Longer Available
Product Information
ManufacturerNXP
Manufacturer Part NoBFG21W,115
Newark Part No.75R4618
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo4.5V
Collector Emitter Voltage Max4.5V
Transition Frequency18GHz
Power Dissipation600mW
Power Dissipation Pd600mW
DC Collector Current500mA
Continuous Collector Current500mA
DC Current Gain hFE40hFE
Transistor Case StyleSOT-343R
No. of Pins4Pins
RF Transistor CaseSOT-343R
DC Current Gain hFE Min40hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Product Overview
The BFG21W,115 is an NPN Double Polysilicon Bipolar Power Transistor with buried layer for low voltage medium power applications encapsulated in a plastic, 4-pin dual-emitter SOT343R package. This UHF power transistor is suitable for linear and non-linear operations.
- High power gain
- High efficiency
Applications
RF Communications
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
4.5V
Power Dissipation
600mW
DC Collector Current
500mA
DC Current Gain hFE
40hFE
No. of Pins
4Pins
DC Current Gain hFE Min
40hFE
Operating Temperature Max
150°C
Qualification
-
SVHC
To Be Advised
Collector Emitter Voltage V(br)ceo
4.5V
Transition Frequency
18GHz
Power Dissipation Pd
600mW
Continuous Collector Current
500mA
Transistor Case Style
SOT-343R
RF Transistor Case
SOT-343R
Transistor Mounting
Surface Mount
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate