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Product Information
ManufacturerNXP
Manufacturer Part NoBFR92AW,115
Newark Part No.70R2557
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo15V
Collector Emitter Voltage Max15V
Transition Frequency5GHz
Power Dissipation Pd300mW
Power Dissipation300mW
Continuous Collector Current25mA
DC Collector Current25mA
DC Current Gain hFE90hFE
Transistor Case StyleSOT-323
RF Transistor CaseSOT-323
No. of Pins3Pins
DC Current Gain hFE Min90hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCTo Be Advised
Product Overview
The BFR92AW,115 is a NPN Wideband Transistor encapsulated in a plastic (s-mini) package. It is designed for use with RF amplifiers, mixers and oscillators with signal frequencies up to 1GHz.
- High power gain
- Gold metallization ensures excellent reliability
Applications
Industrial, RF Communications, Power Management
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
15V
Power Dissipation Pd
300mW
Continuous Collector Current
25mA
DC Current Gain hFE
90hFE
RF Transistor Case
SOT-323
DC Current Gain hFE Min
90hFE
Operating Temperature Max
150°C
Product Range
-
SVHC
To Be Advised
Collector Emitter Voltage V(br)ceo
15V
Transition Frequency
5GHz
Power Dissipation
300mW
DC Collector Current
25mA
Transistor Case Style
SOT-323
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Qualification
-
MSL
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
