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2N4923G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 3 A, 30 W, TO-225, Through Hole
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ManufacturerONSEMI
Manufacturer Part No2N4923G
Newark Part No.26K5285
Product Range2NXXXX Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $0.129 |
| 10+ | $0.129 |
| 100+ | $0.129 |
| 500+ | $0.129 |
| 1000+ | $0.129 |
| 2500+ | $0.129 |
| 10000+ | $0.129 |
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Multiple: 1
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Product Information
ManufacturerONSEMI
Manufacturer Part No2N4923G
Newark Part No.26K5285
Product Range2NXXXX Series
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo80V
Collector Emitter Voltage Max80V
Continuous Collector Current3A
Power Dissipation30W
Power Dissipation Pd30W
DC Collector Current3A
DC Current Gain hFE30hFE
Transistor MountingThrough Hole
Transistor Case StyleTO-225
No. of Pins3Pins
Transition Frequency3MHz
DC Current Gain hFE Min30hFE
Operating Temperature Max150°C
Qualification-
Product Range2NXXXX Series
MSL-
SVHCLead
Product Overview
The 2N4923G is a 1A NPN medium-power Silicon Transistor designed for driver circuits, switching and amplifier applications.
- Low saturation voltage
- Excellent power dissipation due to thermopad construction
- Excellent safe operating area
- Complement to PNP 2N4920G
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
80V
Power Dissipation
30W
DC Collector Current
3A
Transistor Mounting
Through Hole
No. of Pins
3Pins
DC Current Gain hFE Min
30hFE
Qualification
-
MSL
-
Collector Emitter Voltage V(br)ceo
80V
Continuous Collector Current
3A
Power Dissipation Pd
30W
DC Current Gain hFE
30hFE
Transistor Case Style
TO-225
Transition Frequency
3MHz
Operating Temperature Max
150°C
Product Range
2NXXXX Series
SVHC
Lead
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability