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2N5195G
Bipolar (BJT) Single Transistor, PNP, 80 V, 4 A, 40 W, TO-225, Through Hole
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| Quantity | Price |
|---|---|
| 1+ | $1.870 |
| 10+ | $1.280 |
| 100+ | $0.998 |
| 500+ | $0.732 |
| 1000+ | $0.715 |
| 2500+ | $0.704 |
| 10000+ | $0.691 |
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Multiple: 1
$1.87
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Product Information
ManufacturerONSEMI
Manufacturer Part No2N5195G
Newark Part No.39K1518
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max80V
Collector Emitter Voltage V(br)ceo80V
DC Collector Current4A
Continuous Collector Current4A
Power Dissipation Pd40W
Power Dissipation40W
Transistor Case StyleTO-225
Transistor MountingThrough Hole
DC Current Gain hFE80hFE
No. of Pins3Pins
Transition Frequency2MHz
DC Current Gain hFE Min20hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
80V
Continuous Collector Current
4A
Power Dissipation
40W
Transistor Mounting
Through Hole
No. of Pins
3Pins
DC Current Gain hFE Min
20hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
80V
DC Collector Current
4A
Power Dissipation Pd
40W
Transistor Case Style
TO-225
DC Current Gain hFE
80hFE
Transition Frequency
2MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
To Be Advised
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate