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2N5686G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 50 A, 300 mW, TO-204, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part No2N5686G
Newark Part No.26K5299
Product Range2NXXXX Series
Technical Datasheet
161 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $32.430 |
| 10+ | $25.010 |
| 25+ | $24.260 |
| 50+ | $23.500 |
| 100+ | $22.740 |
| 300+ | $21.810 |
| 500+ | $20.880 |
Price for:Each
Minimum: 1
Multiple: 1
$32.43
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Product Information
ManufacturerONSEMI
Manufacturer Part No2N5686G
Newark Part No.26K5299
Product Range2NXXXX Series
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo80V
Collector Emitter Voltage Max80V
Continuous Collector Current50A
Power Dissipation Pd300mW
Power Dissipation300mW
DC Collector Current50A
DC Current Gain hFE2hFE
Transistor MountingThrough Hole
No. of Pins2Pins
Transistor Case StyleTO-204
Transition Frequency2MHz
DC Current Gain hFE Min2hFE
Operating Temperature Max200°C
Qualification-
Product Range2NXXXX Series
MSL-
SVHCLead
Product Overview
The 2N5686G is an NPN Complementary Silicon Power Transistor with designed for use in high-power amplifier and switching circuit applications.
Applications
Industrial
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
80V
Power Dissipation Pd
300mW
DC Collector Current
50A
Transistor Mounting
Through Hole
Transistor Case Style
TO-204
DC Current Gain hFE Min
2hFE
Qualification
-
MSL
-
Collector Emitter Voltage V(br)ceo
80V
Continuous Collector Current
50A
Power Dissipation
300mW
DC Current Gain hFE
2hFE
No. of Pins
2Pins
Transition Frequency
2MHz
Operating Temperature Max
200°C
Product Range
2NXXXX Series
SVHC
Lead
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability