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Available to Order
Manufacturer Standard Lead Time: 3 week(s)
Quantity | Price |
---|---|
30000+ | $0.038 |
Price for:Each (Supplied on Full Reel)
Minimum: 30000
Multiple: 30000
$1,140.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBC847BPDW1T1G
Newark Part No.29X5979
Technical Datasheet
Transistor PolarityNPN, PNP
Collector Emitter Voltage V(br)ceo45V
Collector Emitter Voltage Max45V
Transition Frequency100MHz
Power Dissipation Pd380mW
Power Dissipation380mW
Continuous Collector Current100mA
DC Collector Current100mA
Transistor Case StyleSOT-363
DC Current Gain hFE200hFE
No. of Pins6Pins
RF Transistor CaseSOT-363
DC Current Gain hFE Min200hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The BC847BPDW1T1G is a NPN-PNP dual General Purpose Transistor designed for general purpose amplifier applications. It is housed in a surface-mount package for low power applications.
Technical Specifications
Transistor Polarity
NPN, PNP
Collector Emitter Voltage Max
45V
Power Dissipation Pd
380mW
Continuous Collector Current
100mA
Transistor Case Style
SOT-363
No. of Pins
6Pins
DC Current Gain hFE Min
200hFE
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Collector Emitter Voltage V(br)ceo
45V
Transition Frequency
100MHz
Power Dissipation
380mW
DC Collector Current
100mA
DC Current Gain hFE
200hFE
RF Transistor Case
SOT-363
Transistor Mounting
Surface Mount
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for BC847BPDW1T1G
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Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate