Print Page
BC857CDW1T1G
Bipolar Transistor Array, PNP
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 19 week(s)
| Quantity | Price |
|---|---|
| 6000+ | $0.057 |
| 18000+ | $0.050 |
| 30000+ | $0.043 |
Price for:Each (Supplied on Full Reel)
Minimum: 12000
Multiple: 3000
$684.00
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoBC857CDW1T1G
Newark Part No.11J6887
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max45V
Continuous Collector Current100mA
Power Dissipation380mW
Transistor MountingSurface Mount
Transistor Case StyleSOT-363
DC Current Gain hFE Min270hFE
No. of Pins6Pins
Qualification-
Operating Temperature Max150°C
Product Range-
SVHCNo SVHC (23-Jan-2024)
Product Overview
The BC857CDW1T1G is a dual PNP general purpose Bipolar Transistor designed for general purpose amplifier applications. It is housed in the package which is designed for low power surface-mount applications.
- AEC-Q101 qualified and PPAP capable
Applications
Industrial, Power Management, Automotive
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
100mA
Transistor Mounting
Surface Mount
DC Current Gain hFE Min
270hFE
Qualification
-
Product Range
-
SVHC
No SVHC (23-Jan-2024)
Collector Emitter Voltage Max
45V
Power Dissipation
380mW
Transistor Case Style
SOT-363
No. of Pins
6Pins
Operating Temperature Max
150°C
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for BC857CDW1T1G
1 Product Found
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate