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BC857CDW1T1G
Bipolar Transistor Array, PNP
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBC857CDW1T1G
Newark Part No.11J6887
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max45V
Continuous Collector Current100mA
Power Dissipation380mW
Transistor MountingSurface Mount
Transistor Case StyleSOT-363
DC Current Gain hFE Min270hFE
No. of Pins6Pins
Qualification-
Operating Temperature Max150°C
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (23-Jan-2024)
Product Overview
The BC857CDW1T1G is a dual PNP general purpose Bipolar Transistor designed for general purpose amplifier applications. It is housed in the package which is designed for low power surface-mount applications.
- AEC-Q101 qualified and PPAP capable
Applications
Industrial, Power Management, Automotive
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
100mA
Transistor Mounting
Surface Mount
DC Current Gain hFE Min
270hFE
Qualification
-
Product Range
-
SVHC
No SVHC (23-Jan-2024)
Collector Emitter Voltage Max
45V
Power Dissipation
380mW
Transistor Case Style
SOT-363
No. of Pins
6Pins
Operating Temperature Max
150°C
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Associated Products
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate