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BCW66GLT1G
Bipolar (BJT) Single Transistor, NPN, 45 V, 800 mA, 225 mW, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 14 week(s)
| Quantity | Price |
|---|---|
| 30000+ | $0.031 |
Price for:Each (Supplied on Full Reel)
Minimum: 30000
Multiple: 30000
$930.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBCW66GLT1G
Newark Part No.26K3375
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo45V
Collector Emitter Voltage Max45V
Continuous Collector Current800mA
Power Dissipation225mW
Power Dissipation Pd225mW
DC Collector Current800mA
DC Current Gain hFE160hFE
Transistor MountingSurface Mount
No. of Pins3Pins
Transistor Case StyleSOT-23
Transition Frequency100MHz
DC Current Gain hFE Min160hFE
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The BCW66GLT1G is a NPN general purpose Bipolar Transistor designed for use in linear and switching applications. The device is housed in the package which is designed for lower power surface-mount applications.
- AECQ101 qualified and PPAP capable
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
45V
Power Dissipation
225mW
DC Collector Current
800mA
Transistor Mounting
Surface Mount
Transistor Case Style
SOT-23
DC Current Gain hFE Min
160hFE
Qualification
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage V(br)ceo
45V
Continuous Collector Current
800mA
Power Dissipation Pd
225mW
DC Current Gain hFE
160hFE
No. of Pins
3Pins
Transition Frequency
100MHz
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate