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EMX1DXV6T1G
Bipolar Transistor Array, Dual NPN, 50 V, 100 mA, 357 mW
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Product Information
ManufacturerONSEMI
Manufacturer Part NoEMX1DXV6T1G
Newark Part No.09R9412
Technical Datasheet
Transistor PolarityDual NPN
Collector Emitter Voltage Max NPN50V
Collector Emitter Voltage Max PNP-
Continuous Collector Current NPN100mA
Continuous Collector Current PNP-
Power Dissipation NPN357mW
Power Dissipation PNP-
DC Current Gain hFE Min NPN120hFE
DC Current Gain hFE Min PNP-
Transistor Case StyleSOT-563
No. of Pins6Pins
Transistor MountingSurface Mount
Operating Temperature Max150°C
Transition Frequency NPN180MHz
Transition Frequency PNP-
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Transistor Polarity
Dual NPN
Collector Emitter Voltage Max PNP
-
Continuous Collector Current PNP
-
Power Dissipation PNP
-
DC Current Gain hFE Min PNP
-
No. of Pins
6Pins
Operating Temperature Max
150°C
Transition Frequency PNP
-
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Collector Emitter Voltage Max NPN
50V
Continuous Collector Current NPN
100mA
Power Dissipation NPN
357mW
DC Current Gain hFE Min NPN
120hFE
Transistor Case Style
SOT-563
Transistor Mounting
Surface Mount
Transition Frequency NPN
180MHz
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate