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FDC6333C..
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 2.5 A, 2.5 A, 0.095 ohm
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| Quantity | Price |
|---|---|
| 1+ | $1.090 |
| 10+ | $0.752 |
| 25+ | $0.669 |
| 50+ | $0.584 |
| 100+ | $0.501 |
| 250+ | $0.442 |
| 500+ | $0.384 |
| 1000+ | $0.341 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$5.45
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC6333C..
Newark Part No.47T5019
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id2.5A
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel2.5A
Continuous Drain Current Id P Channel2.5A
Drain Source On State Resistance N Channel0.095ohm
Drain Source On State Resistance P Channel0.095ohm
Transistor Case StyleSuperSOT
No. of Pins6Pins
Power Dissipation N Channel960mW
Power Dissipation P Channel960mW
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDC6333C is a N/P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain superior switching performance. It has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive packages are impractical. It is suitable for use with DC-to-DC converter, load switch and LCD display inverter applications.
- Low gate charge
- Small footprint
- Low profile
- High performance Trench technology for extremely low RDS (ON)
Applications
Industrial, Power Management
Technical Specifications
Channel Type
Complementary N and P Channel
Continuous Drain Current Id
2.5A
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
2.5A
Drain Source On State Resistance P Channel
0.095ohm
No. of Pins
6Pins
Power Dissipation P Channel
960mW
Product Range
-
MSL
-
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds
30V
Continuous Drain Current Id N Channel
2.5A
Drain Source On State Resistance N Channel
0.095ohm
Transistor Case Style
SuperSOT
Power Dissipation N Channel
960mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability