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FDG6335N
Dual MOSFET, N Channel, 20 V, 20 V, 700 mA, 700 mA, 0.18 ohm
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 1 week(s)
| Quantity | Price |
|---|---|
| 3000+ | $0.351 |
| 6000+ | $0.325 |
| 12000+ | $0.304 |
| 18000+ | $0.284 |
| 30000+ | $0.272 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$1,053.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDG6335N
Newark Part No.29X6689
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id700mA
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id N Channel700mA
Continuous Drain Current Id P Channel700mA
Drain Source On State Resistance N Channel0.18ohm
Drain Source On State Resistance P Channel0.18ohm
Transistor Case StyleSC-70
No. of Pins6Pins
Power Dissipation N Channel300mW
Power Dissipation P Channel300mW
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDG6335N is a PowerTrench® dual N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS (ON) and gate charge (QG) in a small package. It is suitable for use with DC-to-DC converters and load switch applications.
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- Compact industry standard surface-mount-package
- ±12V Gate to source voltage
- 0.7A Continuous drain current
- 2.1A Pulsed drain current
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds
20V
Continuous Drain Current Id P Channel
700mA
Drain Source On State Resistance P Channel
0.18ohm
No. of Pins
6Pins
Power Dissipation P Channel
300mW
Product Range
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
700mA
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
700mA
Drain Source On State Resistance N Channel
0.18ohm
Transistor Case Style
SC-70
Power Dissipation N Channel
300mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Alternatives for FDG6335N
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Associated Products
1 Product Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate