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Quantity | Price |
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1+ | $1.370 |
10+ | $0.941 |
25+ | $0.875 |
50+ | $0.807 |
100+ | $0.740 |
250+ | $0.708 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDMC8882
Newark Part No.88T3285
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id16A
Drain Source On State Resistance0.0124ohm
On Resistance Rds(on)0.0124ohm
Transistor Case StyleMLP
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd18W
Gate Source Threshold Voltage Max1.9V
Power Dissipation18W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The FDMC8882 is a N-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance. It is well suited for load switching applications common in portable battery packs.
- High performance technology for extremely low RDS (ON)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
16A
On Resistance Rds(on)
0.0124ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
18W
Power Dissipation
18W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0124ohm
Transistor Case Style
MLP
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.9V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Alternatives for FDMC8882
1 Product Found
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability