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FDMS86103L
Power MOSFET, N Channel, 100 V, 49 A, 0.0064 ohm, Power 56, Surface Mount
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| Quantity | Price |
|---|---|
| 1+ | $3.270 |
| 10+ | $3.100 |
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Multiple: 1
$3.27
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDMS86103L
Newark Part No.88T3338
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id49A
Drain Source On State Resistance0.0064ohm
On Resistance Rds(on)0.0064ohm
Transistor Case StylePower 56
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd104W
Gate Source Threshold Voltage Max1.9V
Power Dissipation104W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The FDMS86103L is a N-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance.
- Shielded gate MOSFET technology
- Advanced package and silicon combination for low RDS (ON) and high efficiency
- MSL1 Robust package design
- 100% UIL tested
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
49A
On Resistance Rds(on)
0.0064ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
104W
Power Dissipation
104W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0064ohm
Transistor Case Style
Power 56
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.9V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
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Associated Products
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability