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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDMS86104
Newark Part No.88T3339
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id16A
On Resistance Rds(on)0.02ohm
Drain Source On State Resistance0.024ohm
Transistor Case StylePower 56
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd73W
Gate Source Threshold Voltage Max2.9V
Power Dissipation73W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Product Overview
The FDMS86104 is a N-channel MOSFET is produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance.
- Shielded gate MOSFET technology
- Advanced package and silicon combination for low RDS (ON) and high efficiency
- MSL1 Robust package design
- 100% UIL tested
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
16A
Drain Source On State Resistance
0.024ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
73W
Power Dissipation
73W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.02ohm
Transistor Case Style
Power 56
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.9V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Alternatives for FDMS86104
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Associated Products
2 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability